PART |
Description |
Maker |
THM321020S-10 THM321020S-80 THM321020SG-10 THM3210 |
Chip-on-Glass (COG) Technology, 16 Characters x 2 Lines 1048576 WORDS x 32 BIT DYNAMIC RAM MODULE 1,048,576 WORDS x 32 BIT DYNAMIC RAM MODULE 1/048/576 WORDS x 32 BIT DYNAMIC RAM MODULE
|
Toshiba Corporation TOSHIBA[Toshiba Semiconductor]
|
GM71C18163CL-6 GM71C18163C GM71C18163CL-5 GM71C181 |
1,048,576 words x 16 bit CMOS DRAM, 60ns 1,048,576 WORDS x 16 BIT CMOS DYNAMIC RAM
|
HYNIX[Hynix Semiconductor]
|
THM321000S-10 THM321000S-80 THM321000SG-10 THM3210 |
Chip-on-Glass (COG) Technology, 16 Characters x 2 Lines 1,048,576 WORDS x 32 BIT DYNAMIC RAM MODULE 1/048/576 WORDS x 32 BIT DYNAMIC RAM MODULE
|
Toshiba Corporation TOSHIBA[Toshiba Semiconductor]
|
MSM531655E MSM531655E-XXTS-K MSM531655E-XXGS-K |
524,288-Double Words x 32-bit or 1,048,576-Words x 16-bit MaskROM, 8Double Word x 32-Bit or 16Word x 16-Bit/Page Mode MASKROM
|
OKI SEMICONDUCTOR CO., LTD.
|
KM44V4104BK KM44V4104B |
4M x 4Bit CMOS Dynamic RAM V(cc): -0.5 to 4.6V; 1W; 50mA; 4M x 4-bit CMOS dynamic RAM with extended data out
|
Samsung semiconductor Samsung Electronic
|
VG26VS17400FJ VG26S17400FJ-6 VG26V17400FJ-6 VG26V1 |
4,194,304 x 4 - Bit CMOS Dynamic RAM 4M X 4 FAST PAGE DRAM, 60 ns, PDSO24 4/194/304 x 4 - Bit CMOS Dynamic RAM
|
Vanguard International ... Vanguard International Semiconductor, Corp.
|
MDT10C23 MDT10P23 |
8 Bit Micro Controller Fully CMOS static design, 8-bit data bus,On chip ROM size : 2 K words
|
Micon Design Technology ETC List of Unclassifed Manufacturers
|
MB814265-70 MB814265-60 |
CMOS 256K ×16 BIT
Hyper Page Mode Dynamic RAM(CMOS 256K ×16 位超级页面存取模式动态RAM) CMOS 256K ×16 BIT Hyper Page Mode Dynamic RAM(CMOS 256K ×16 位超级页面存取模式动态RAM) 的CMOS 256K × 16位的超页模式动态RAM的CMOS56K × 16位超级页面存取模式动态内存) CMOS 256K ?16 BIT Hyper Page Mode Dynamic RAM(CMOS 256K ?16 浣??绾ч〉?㈠???ā寮????AM)
|
Fujitsu Limited Fujitsu, Ltd.
|
IS42S16100A1 IS42S16100 IS42S16100-7T IS42S16100-1 |
512K WORDS X 16 BITS X 2 BANKS (16-MBIT) SYNCHRONOUS DYNAMIC RAM 16mb Synchronous Dynamic RAM: 512kx16x2
|
Integrated Silicon Solution, Inc ISSI
|
MB814260-70 MB814260-60 |
CMOS 256K ×16 BIT
FAST PAGE MODE DYNAMIC RAM(CMOS 256K ×16 位快速页面存取模式动态RAM) CMOS 256K ×16 BIT FAST PAGE MODE DYNAMIC RAM(CMOS 256K ×16 位快速页面存取模式动态RAM) 的CMOS 256K × 16位快速页面模式的动态随机存储器(的CMOS 256K × 16位快速页面存取模式动态内存) CMOS 256K ?16 BIT FAST PAGE MODE DYNAMIC RAM(CMOS 256K ?16 浣?揩??〉?㈠???ā寮????AM)
|
Fujitsu Limited Fujitsu, Ltd.
|
MB81116822A-84 MB81116822A-125 |
CMOS 2×1M ×8 BIT
Hyper Page Mode Dynamic RAM(CMOS 2×1M ×8位超级页面存取模式动态RAM)
|
Fujitsu Limited
|
MB8504S064AC-100 MB8504S064AC-84 MB8504S064AC-67 |
CMOS 4M×64 Bit Synchronous Dynamic Random Access Memory (SDRAM)(CMOS 4M×64位同步动态RAM)
|
Fujitsu Limited
|